| PART |
Description |
Maker |
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| MRF1518NT1_06 MRF1518NT1 MRF1518NT106 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF6522-70 MRF6522-70R306 MRF6522-70R3 |
RF Power Field Effect Transistor
|
http://
Freescale Semiconductor, Inc
|
| MRF6P24190HR6 MRF6P24190HR608 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF1517T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF1517NT1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP10N35 MTP10N40 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| IRF830 |
Power Field Effect Transistor
|
ON Semiconductor
|
| UFT150-28 |
RF POWER FIELD-EFFECT TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| MTM25P10 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
| MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
